AP60P03D Todos los transistores

AP60P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS D BVDSS/ TJ BVDSS Temperature Coefficient Reference to 25 , I =-1mA --- -0.0232 --- D V/ V =-10V , I =-30A --- 9.6 13 GS D RDS(ON) St

AP60P02D -20V P-Channel Enhancement Mode MOSFET Description The AP60P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-60A DS D R

AP60P20Q P-Channel Enhancement Mosfet Feature -20V,-60A R

AP60PN72RLEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600V D Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mA S RoHS Compliant & Halogen-Free HBM ESD 2KV SOT-23 G Description D AP60PN72 series are from Advanced Power innovated design and silicon process technology to a

AP60PN72REN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600V D Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mA S RoHS Compliant & Halogen-Free HBM ESD 2KV SOT-23 G Description D AP60PN72 series are from Advanced Power innovated design and silicon process technology to ac

NCEAP60P90AK http //www.ncepower.com NCE Automotive P-Channel Super Trench Power MOSFET General Features Description V =-60V,I =-90A DS D The NCEAP60P90AK uses Super Trench technology that is R =7.6m (typical) @ V =-10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =9.2m (typical) @ V =-4.5V DS(ON) GS switching performance. Both conduction and

AP60P20Q P-Channel Enhancement Mosfet Feature -20V,-60A R