AP60P03D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60P03D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73.7 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: TO252

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AP60P03D datasheet

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AP60P03D

AP60P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS D BVDSS/ TJ BVDSS Temperature Coefficient Reference to 25 , I =-1mA --- -0.0232 --- D V/ V =-10V , I =-30A --- 9.6 13 GS D RDS(ON) St

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AP60P03D

AP60P02D -20V P-Channel Enhancement Mode MOSFET Description The AP60P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-60A DS D R

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AP60P03D

AP60P20Q P-Channel Enhancement Mosfet Feature -20V,-60A R

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AP60P03D

AP60PN72RLEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600V D Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mA S RoHS Compliant & Halogen-Free HBM ESD 2KV SOT-23 G Description D AP60PN72 series are from Advanced Power innovated design and silicon process technology to a

MOSTRAR MÁS

Otros transistores... ATM3407PSA, ATM3415KPSA, ATM6402NSA, ATM7414NDH, ATM7N65ATE, ATM8205DNPD, ATM8205DNSG, ATM9435PPA, IRF9540N, AP65N03DF, AP65N04DF, AP65N06NF, AP68N04DF, AP68N04NF, AP6946A, AP6G03LI, AP260N12TLG1