AP60P03D Spec and Replacement
Type Designator: AP60P03D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 73.7 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO252
AP60P03D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP60P03D Specs
ap60p03d.pdf
AP60P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS D BVDSS/ TJ BVDSS Temperature Coefficient Reference to 25 , I =-1mA --- -0.0232 --- D V/ V =-10V , I =-30A --- 9.6 13 GS D RDS(ON) St... See More ⇒
ap60p02d.pdf
AP60P02D -20V P-Channel Enhancement Mode MOSFET Description The AP60P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-60A DS D R ... See More ⇒
ap60p20q.pdf
AP60P20Q P-Channel Enhancement Mosfet Feature -20V,-60A R ... See More ⇒
ap60pn72rlen.pdf
AP60PN72RLEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600V D Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mA S RoHS Compliant & Halogen-Free HBM ESD 2KV SOT-23 G Description D AP60PN72 series are from Advanced Power innovated design and silicon process technology to a... See More ⇒
Detailed specifications: ATM3407PSA , ATM3415KPSA , ATM6402NSA , ATM7414NDH , ATM7N65ATE , ATM8205DNPD , ATM8205DNSG , ATM9435PPA , IRF9540N , AP65N03DF , AP65N04DF , AP65N06NF , AP68N04DF , AP68N04NF , AP6946A , AP6G03LI , AP260N12TLG1 .
History: AP4N3R2MT
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