AP40N03S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP40N03S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 59 nS

Cossⓘ - Capacitancia de salida: 163 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SOP8

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AP40N03S datasheet

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 ap40n03s.pdf pdf_icon

AP40N03S

AP40N03S 30V N-Channel Enhancement Mode MOSFET Description The AP40N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =40 A DS D R

 7.1. Size:94K  ape
 ap40n03gp-hf.pdf pdf_icon

AP40N03S

AP40N03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-Free G TO-220 D S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 7.2. Size:95K  ape
 ap40n03gp.pdf pdf_icon

AP40N03S

AP40N03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D TO-220 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-r

 7.3. Size:126K  ape
 ap40n03gs.pdf pdf_icon

AP40N03S

AP40N03GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D S TO-263 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-res

MOSTRAR MÁS

Otros transistores... AP260N12TLG1, AP30N10Y, AP30N15D, AP30N20P, AP30P01DF, AP30P02DF, AP30P03D, AP40N02D, AON6380, AP40N10P, AP40N20MP, AP40P02D, AP40P03DF, AP40P04D, AP40P04DF, AP40P04NF, AP5P04MI