AP40N03S Datasheet and Replacement

AP40N03S 30V N-Channel Enhancement Mode MOSFET Description The AP40N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =40 A DS DR

AP40N03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-FreeGTO-220DSDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

AP40N03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40AGD TO-220SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-r

AP40N03GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40AGDS TO-263DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-res

AP40N03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOS FET Low Gate Charge BVDSS 30VD Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID 36AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S

AP40N03GPwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.010 at VGS = 10 V 5530 25 nC0.018 at VGS = 4.5 V 45DTO-220AB GSG D SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise note