AP40N03S Datasheet. Specs and Replacement

Type Designator: AP40N03S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SOP8

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AP40N03S datasheet

 ..1. Size:1155K  cn apm
ap40n03s.pdf pdf_icon

AP40N03S

AP40N03S 30V N-Channel Enhancement Mode MOSFET Description The AP40N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =40 A DS D R ... See More ⇒

 7.1. Size:94K  ape
ap40n03gp-hf.pdf pdf_icon

AP40N03S

AP40N03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-Free G TO-220 D S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ... See More ⇒

 7.2. Size:95K  ape
ap40n03gp.pdf pdf_icon

AP40N03S

AP40N03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D TO-220 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-r... See More ⇒

 7.3. Size:126K  ape
ap40n03gs.pdf pdf_icon

AP40N03S

AP40N03GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D S TO-263 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-res... See More ⇒

Detailed specifications: AP260N12TLG1, AP30N10Y, AP30N15D, AP30N20P, AP30P01DF, AP30P02DF, AP30P03D, AP40N02D, AON6380, AP40N10P, AP40N20MP, AP40P02D, AP40P03DF, AP40P04D, AP40P04DF, AP40P04NF, AP5P04MI

Keywords - AP40N03S MOSFET specs

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