AP40P04D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP40P04D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO252

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AP40P04D datasheet

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AP40P04D

AP40P04D -40V P-Channel Enhancement Mode MOSFET Description The AP40P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R

 0.1. Size:1350K  cn apm
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AP40P04D

AP40P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R

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AP40P04D

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AP40P04D

MOSTRAR MÁS

Otros transistores... AP30P02DF, AP30P03D, AP40N02D, AP40N03S, AP40N10P, AP40N20MP, AP40P02D, AP40P03DF, STP80NF70, AP40P04DF, AP40P04NF, AP5P04MI, AP5P06MSI, AP60N02D, AP60N02DF, AP60N02NF, AP60N03D