AP40P04D Todos los transistores

 

AP40P04D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP40P04D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET AP40P04D

 

Principales características: AP40P04D

 ..1. Size:1441K  cn apm
 ap40p04d.pdf pdf_icon

AP40P04D

AP40P04D -40V P-Channel Enhancement Mode MOSFET Description The AP40P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R

 0.1. Size:1350K  cn apm
 ap40p04df.pdf pdf_icon

AP40P04D

AP40P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R

 7.1. Size:606K  allpower
 ap40p04g.pdf pdf_icon

AP40P04D

 7.2. Size:638K  allpower
 ap40p04q.pdf pdf_icon

AP40P04D

MOSTRAR MÁS

Otros transistores... AP30P02DF , AP30P03D , AP40N02D , AP40N03S , AP40N10P , AP40N20MP , AP40P02D , AP40P03DF , STP80NF70 , AP40P04DF , AP40P04NF , AP5P04MI , AP5P06MSI , AP60N02D , AP60N02DF , AP60N02NF , AP60N03D .

History: AP4N4R2H

 

 
Back to Top

 


 
.