AP60N02D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: AP60N02D

..1. Size:1158K cn apm
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AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

0.1. Size:1352K cn apm
ap60n02df.pdf pdf_icon

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

7.1. Size:1354K cn apm
ap60n02nf.pdf pdf_icon

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

7.2. Size:1402K cn apm
ap60n02bd.pdf pdf_icon

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

Otros transistores... AP40N20MP , AP40P02D , AP40P03DF , AP40P04D , AP40P04DF , AP40P04NF , AP5P04MI , AP5P06MSI , 4N60 , AP60N02DF , AP60N02NF , AP60N03D , AP60N03DF , AP60N03NF , AP60N03Y , AP60N04D , AP60N04DF .