AP60N02D - аналоги и даташиты транзистора

 

AP60N02D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP60N02D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 57 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 49 ns
   Cossⓘ - Выходная емкость: 407 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AP60N02D

 

AP60N02D Datasheet (PDF)

 ..1. Size:1158K  cn apm
 ap60n02d.pdf pdf_icon

AP60N02D

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 0.1. Size:1352K  cn apm
 ap60n02df.pdf pdf_icon

AP60N02D

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.1. Size:1354K  cn apm
 ap60n02nf.pdf pdf_icon

AP60N02D

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.2. Size:1402K  cn apm
 ap60n02bd.pdf pdf_icon

AP60N02D

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP40N20MP , AP40P02D , AP40P03DF , AP40P04D , AP40P04DF , AP40P04NF , AP5P04MI , AP5P06MSI , 4N60 , AP60N02DF , AP60N02NF , AP60N03D , AP60N03DF , AP60N03NF , AP60N03Y , AP60N04D , AP60N04DF .

 

 
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