AP60N02NF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60N02NF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 289 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: PDFN3X3-8L

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AP60N02NF datasheet

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 ap60n02nf.pdf pdf_icon

AP60N02NF

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.1. Size:1352K  cn apm
 ap60n02df.pdf pdf_icon

AP60N02NF

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.2. Size:1158K  cn apm
 ap60n02d.pdf pdf_icon

AP60N02NF

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.3. Size:1402K  cn apm
 ap60n02bd.pdf pdf_icon

AP60N02NF

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

MOSTRAR MÁS

Otros transistores... AP40P03DF, AP40P04D, AP40P04DF, AP40P04NF, AP5P04MI, AP5P06MSI, AP60N02D, AP60N02DF, IRF1407, AP60N03D, AP60N03DF, AP60N03NF, AP60N03Y, AP60N04D, AP60N04DF, AP60N04NF, AP60N06F