AP60N02NF Todos los transistores

 

AP60N02NF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60N02NF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 289 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: PDFN3X3-8L

 Búsqueda de reemplazo de MOSFET AP60N02NF

 

Principales características: AP60N02NF

 ..1. Size:1354K  cn apm
 ap60n02nf.pdf pdf_icon

AP60N02NF

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.1. Size:1352K  cn apm
 ap60n02df.pdf pdf_icon

AP60N02NF

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.2. Size:1158K  cn apm
 ap60n02d.pdf pdf_icon

AP60N02NF

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.3. Size:1402K  cn apm
 ap60n02bd.pdf pdf_icon

AP60N02NF

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

MOSTRAR MÁS

Otros transistores... AP40P03DF , AP40P04D , AP40P04DF , AP40P04NF , AP5P04MI , AP5P06MSI , AP60N02D , AP60N02DF , IRF1407 , AP60N03D , AP60N03DF , AP60N03NF , AP60N03Y , AP60N04D , AP60N04DF , AP60N04NF , AP60N06F .

 

 
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