AP60N02NF datasheet, аналоги, основные параметры

Наименование производителя: AP60N02NF  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 37 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 37 ns

Cossⓘ - Выходная емкость: 289 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm

Тип корпуса: PDFN3X3-8L

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Аналог (замена) для AP60N02NF

- подборⓘ MOSFET транзистора по параметрам

 

AP60N02NF даташит

 ..1. Size:1354K  cn apm
 ap60n02nf.pdf pdf_icon

AP60N02NF

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.1. Size:1352K  cn apm
 ap60n02df.pdf pdf_icon

AP60N02NF

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.2. Size:1158K  cn apm
 ap60n02d.pdf pdf_icon

AP60N02NF

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 7.3. Size:1402K  cn apm
 ap60n02bd.pdf pdf_icon

AP60N02NF

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

ПОКАЗАТЬ ЕЩЁ

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