AP60N04D Todos los transistores

 

AP60N04D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60N04D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 10.7 nC
   trⓘ - Tiempo de subida: 3.4 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0205 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET AP60N04D

 

Principales características: AP60N04D

 ..1. Size:897K  cn apm
 ap60n04d.pdf pdf_icon

AP60N04D

AP60N04D 40V N-Channel Enhancement Mode MOSFET Description The AP60N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 0.1. Size:1593K  cn apm
 ap60n04df.pdf pdf_icon

AP60N04D

AP60N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 7.1. Size:1507K  allpower
 ap60n04q.pdf pdf_icon

AP60N04D

 7.2. Size:1454K  cn apm
 ap60n04nf.pdf pdf_icon

AP60N04D

AP60N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

MOSTRAR MÁS

Otros transistores... AP5P06MSI , AP60N02D , AP60N02DF , AP60N02NF , AP60N03D , AP60N03DF , AP60N03NF , AP60N03Y , SI2302 , AP60N04DF , AP60N04NF , AP60N06F , AP60P02D , AGMH10P15C , AGMH10P15D , AGMH12H05H , AGMH12N10C .

 

 
Back to Top

 


 
.