AP60N04D Datasheet. Specs and Replacement

Type Designator: AP60N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm

Package: TO252

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AP60N04D datasheet

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AP60N04D

AP60N04D 40V N-Channel Enhancement Mode MOSFET Description The AP60N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R ... See More ⇒

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AP60N04D

AP60N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R ... See More ⇒

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AP60N04D

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AP60N04D

AP60N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R ... See More ⇒

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Detailed specifications: AP5P06MSI, AP60N02D, AP60N02DF, AP60N02NF, AP60N03D, AP60N03DF, AP60N03NF, AP60N03Y, SI2302, AP60N04DF, AP60N04NF, AP60N06F, AP60P02D, AGMH10P15C, AGMH10P15D, AGMH12H05H, AGMH12N10C

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