AP60P02D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60P02D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO252

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AP60P02D datasheet

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AP60P02D

AP60P02D -20V P-Channel Enhancement Mode MOSFET Description The AP60P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-60A DS D R

 8.1. Size:866K  cn apm
ap60p03d.pdf pdf_icon

AP60P02D

AP60P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS D BVDSS/ TJ BVDSS Temperature Coefficient Reference to 25 , I =-1mA --- -0.0232 --- D V/ V =-10V , I =-30A --- 9.6 13 GS D RDS(ON) St

 9.1. Size:1072K  1
ap60p20q.pdf pdf_icon

AP60P02D

AP60P20Q P-Channel Enhancement Mosfet Feature -20V,-60A R

 9.2. Size:144K  ape
ap60pn72rlen.pdf pdf_icon

AP60P02D

AP60PN72RLEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600V D Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mA S RoHS Compliant & Halogen-Free HBM ESD 2KV SOT-23 G Description D AP60PN72 series are from Advanced Power innovated design and silicon process technology to a

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