AP60P02D Datasheet. Specs and Replacement

Type Designator: AP60P02D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

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AP60P02D datasheet

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AP60P02D

AP60P02D -20V P-Channel Enhancement Mode MOSFET Description The AP60P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-60A DS D R ... See More ⇒

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AP60P02D

AP60P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS D BVDSS/ TJ BVDSS Temperature Coefficient Reference to 25 , I =-1mA --- -0.0232 --- D V/ V =-10V , I =-30A --- 9.6 13 GS D RDS(ON) St... See More ⇒

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AP60P02D

AP60P20Q P-Channel Enhancement Mosfet Feature -20V,-60A R ... See More ⇒

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AP60P02D

AP60PN72RLEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600V D Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mA S RoHS Compliant & Halogen-Free HBM ESD 2KV SOT-23 G Description D AP60PN72 series are from Advanced Power innovated design and silicon process technology to a... See More ⇒

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Detailed specifications: AP60N03D, AP60N03DF, AP60N03NF, AP60N03Y, AP60N04D, AP60N04DF, AP60N04NF, AP60N06F, IRF520, AGMH10P15C, AGMH10P15D, AGMH12H05H, AGMH12N10C, AGMH6018C, AGMH6035D, AGMH603H, AGM628AP

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