AGMH12H05H Todos los transistores

 

AGMH12H05H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGMH12H05H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 125 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 1046 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de MOSFET AGMH12H05H

 

Principales características: AGMH12H05H

 ..1. Size:2008K  cn agmsemi
 agmh12h05h.pdf pdf_icon

AGMH12H05H

AGMH12H05H General Description Product Summary The AGMH12H05H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 4.5m 125A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to

 8.1. Size:1642K  cn agmsemi
 agmh12n10c.pdf pdf_icon

AGMH12H05H

AGMH12N10C General Description Product Summary The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 9.6m 55A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to m

 8.2. Size:1651K  cn agmsemi
 agmh12n10i.pdf pdf_icon

AGMH12H05H

AGMH12N10I Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10I Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH

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 agmh12n10d.pdf pdf_icon

AGMH12H05H

AGMH12N10D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10D AGMH12N10D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I

MOSTRAR MÁS

Otros transistores... AP60N03Y , AP60N04D , AP60N04DF , AP60N04NF , AP60N06F , AP60P02D , AGMH10P15C , AGMH10P15D , IRFZ24N , AGMH12N10C , AGMH6018C , AGMH6035D , AGMH603H , AGM628AP , AGM628D , AGM628DM1 , AGM1095M .

 

 
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