AGMH12H05H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGMH12H05H  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 125 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 1046 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm

Encapsulados: TO263

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AGMH12H05H datasheet

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AGMH12H05H

AGMH12H05H General Description Product Summary The AGMH12H05H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 4.5m 125A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to

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AGMH12H05H

AGMH12N10C General Description Product Summary The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 9.6m 55A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to m

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AGMH12H05H

AGMH12N10I Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10I Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH

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AGMH12H05H

AGMH12N10D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10D AGMH12N10D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I

MOSTRAR MÁS

Otros transistores... AP60N03Y, AP60N04D, AP60N04DF, AP60N04NF, AP60N06F, AP60P02D, AGMH10P15C, AGMH10P15D, IRFZ24N, AGMH12N10C, AGMH6018C, AGMH6035D, AGMH603H, AGM628AP, AGM628D, AGM628DM1, AGM1095M