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AGMH12H05H Spec and Replacement


   Type Designator: AGMH12H05H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 125 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1046 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: TO263

 AGMH12H05H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AGMH12H05H Specs

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AGMH12H05H

AGMH12H05H General Description Product Summary The AGMH12H05H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 4.5m 125A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to ... See More ⇒

 8.1. Size:1642K  cn agmsemi
 agmh12n10c.pdf pdf_icon

AGMH12H05H

AGMH12N10C General Description Product Summary The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 9.6m 55A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to m... See More ⇒

 8.2. Size:1651K  cn agmsemi
 agmh12n10i.pdf pdf_icon

AGMH12H05H

AGMH12N10I Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10I Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH... See More ⇒

 8.3. Size:1655K  cn agmsemi
 agmh12n10d.pdf pdf_icon

AGMH12H05H

AGMH12N10D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10D AGMH12N10D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I... See More ⇒

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Detailed specifications: AP60N03Y , AP60N04D , AP60N04DF , AP60N04NF , AP60N06F , AP60P02D , AGMH10P15C , AGMH10P15D , IRFZ24N , AGMH12N10C , AGMH6018C , AGMH6035D , AGMH603H , AGM628AP , AGM628D , AGM628DM1 , AGM1095M .

Keywords - AGMH12H05H MOSFET specs

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