AGM12T08C Todos los transistores

 

AGM12T08C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM12T08C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO220
 

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AGM12T08C Datasheet (PDF)

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AGM12T08C

AGM12T08C General DescriptionProduct SummaryThe AGM12T08C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.120V 6.7m 78A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to min

 6.1. Size:1921K  cn agmsemi
 agm12t08a.pdf pdf_icon

AGM12T08C

AGM12T08AFig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage208010V 6VID=20A4.5V4V1560125C10403.5V25C520Vgs=3V002 4 6 8 100 0.5 1 1.5 2VGS (V)VDS (V)Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature152.2ID=20A2121.8 VGS=10VVGS

 7.1. Size:1313K  cn agmsemi
 agm12t05f.pdf pdf_icon

AGM12T08C

AGM12T05F General DescriptionThe AGM12T05F combines advanced trenchProduct SummaryMOSFET technology with a low resistance packagetoprovide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features120V 5.5m 100AAdvance high cell density Trench technology Low R to minimize conductive loss TO-22

 7.2. Size:1594K  cn agmsemi
 agm12t05c.pdf pdf_icon

AGM12T08C

AGM12T05C General DescriptionProduct SummaryThe AGM12T05C combines advanced trenchMOSFET technology with a low resistance packagetoprovide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.120V 5.5m 100A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to mini

MOSTRAR MÁS

Otros transistores... AGMH6018C , AGMH6035D , AGMH603H , AGM628AP , AGM628D , AGM628DM1 , AGM1095M , AGM1099EL , 60N06 , , , , , , , , .

History: AGM628DM1 | AGM1095M

 

 
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