AGM12T08C Todos los transistores

 

AGM12T08C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM12T08C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO220
 

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AGM12T08C datasheet

 ..1. Size:1911K  cn agmsemi
agm12t08c.pdf pdf_icon

AGM12T08C

AGM12T08C General Description Product Summary The AGM12T08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 6.7m 78A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to min

 6.1. Size:1921K  cn agmsemi
agm12t08a.pdf pdf_icon

AGM12T08C

AGM12T08A Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 20 80 10V 6V ID=20A 4.5V 4V 15 60 125 C 10 40 3.5V 25 C 5 20 Vgs=3V 0 0 2 4 6 8 10 0 0.5 1 1.5 2 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 15 2.2 ID=20A 2 12 1.8 VGS=10V VGS

 7.1. Size:1313K  cn agmsemi
agm12t05f.pdf pdf_icon

AGM12T08C

AGM12T05F General Description The AGM12T05F combines advanced trench Product Summary MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 120V 5.5m 100A Advance high cell density Trench technology Low R to minimize conductive loss TO-22

 7.2. Size:1594K  cn agmsemi
agm12t05c.pdf pdf_icon

AGM12T08C

AGM12T05C General Description Product Summary The AGM12T05C combines advanced trench MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 120V 5.5m 100A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mini

Otros transistores... AGMH6018C , AGMH6035D , AGMH603H , AGM628AP , AGM628D , AGM628DM1 , AGM1095M , AGM1099EL , IRFZ48N , AGM30P20S , AGM30P25AP , AGM30P25D , AGM30P25M , AGM30P25MBP , AGM30P25MBQ , AGM30P25S , AGM30P35AP .

History: BRCS2321MC | AGM30P35D | AGM628D | IRFZ46NLPBF | AGM20P07EL | IRLI530G

 

 
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