AGM12T08C - аналоги, даташиты, параметры транзистора

AGM12T08C Datasheet (PDF)

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AGM12T08C General DescriptionProduct SummaryThe AGM12T08C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.120V 6.7m 78A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to min

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AGM12T08AFig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage208010V 6VID=20A4.5V4V1560125C10403.5V25C520Vgs=3V002 4 6 8 100 0.5 1 1.5 2VGS (V)VDS (V)Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature152.2ID=20A2121.8 VGS=10VVGS

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AGM12T05F General DescriptionThe AGM12T05F combines advanced trenchProduct SummaryMOSFET technology with a low resistance packagetoprovide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features120V 5.5m 100AAdvance high cell density Trench technology Low R to minimize conductive loss TO-22

7.2. Size:1594K cn agmsemi
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AGM12T05C General DescriptionProduct SummaryThe AGM12T05C combines advanced trenchMOSFET technology with a low resistance packagetoprovide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.120V 5.5m 100A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to mini