AGM30P35AP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM30P35AP  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm

Encapsulados: PDFN3.3X3.3

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AGM30P35AP datasheet

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AGM30P35AP

AGM30P35AP General Description Product Summary The AGM30P35AP combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -16A protection applications. PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technology R to minimi

 6.1. Size:1276K  cn agmsemi
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AGM30P35AP

AGM30P35S General Description Product Summary The AGM30P35S combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -6A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology R to minimize conduct

 6.2. Size:1239K  cn agmsemi
 agm30p35m.pdf pdf_icon

AGM30P35AP

AGM30P35M General Description Product Summary The AGM30P35M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 33m -5.4A protection applications. Features SOP8 Pin Configuration Advance high cell density Trench technology R to minimize conduct

 6.3. Size:1193K  cn agmsemi
 agm30p35d.pdf pdf_icon

AGM30P35AP

AGM30P35D General Description Product Summary The AGM30P35D combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 36.5m -20A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology R to minimize cond

MOSTRAR MÁS

Otros transistores... AGM12T08C, AGM30P20S, AGM30P25AP, AGM30P25D, AGM30P25M, AGM30P25MBP, AGM30P25MBQ, AGM30P25S, AO4407, AGM30P35D, AGM30P35M, AGM30P35S, AGM30P55A, AGM30P55D, AGM30P55D1, AGM30P85D, AGM015N10LL