AGM30P35AP - описание и поиск аналогов

 

Аналоги AGM30P35AP. Основные параметры


   Наименование производителя: AGM30P35AP
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 25.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4.5 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.043 Ohm
   Тип корпуса: PDFN3.3X3.3
 

 Аналог (замена) для AGM30P35AP

   - подбор ⓘ MOSFET транзистора по параметрам

 

AGM30P35AP даташит

 ..1. Size:1266K  cn agmsemi
 agm30p35ap.pdf pdf_icon

AGM30P35AP

AGM30P35AP General Description Product Summary The AGM30P35AP combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -16A protection applications. PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technology R to minimi

 6.1. Size:1276K  cn agmsemi
 agm30p35s.pdf pdf_icon

AGM30P35AP

AGM30P35S General Description Product Summary The AGM30P35S combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -6A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology R to minimize conduct

 6.2. Size:1239K  cn agmsemi
 agm30p35m.pdf pdf_icon

AGM30P35AP

AGM30P35M General Description Product Summary The AGM30P35M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 33m -5.4A protection applications. Features SOP8 Pin Configuration Advance high cell density Trench technology R to minimize conduct

 6.3. Size:1193K  cn agmsemi
 agm30p35d.pdf pdf_icon

AGM30P35AP

AGM30P35D General Description Product Summary The AGM30P35D combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 36.5m -20A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology R to minimize cond

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AGM12T08C , AGM30P20S , AGM30P25AP , AGM30P25D , AGM30P25M , AGM30P25MBP , AGM30P25MBQ , AGM30P25S , EMB04N03H , AGM30P35D , AGM30P35M , AGM30P35S , AGM30P55A , AGM30P55D , AGM30P55D1 , AGM30P85D , AGM015N10LL .

History: VSP008N10MSC

 

 
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