AGM01T08LL Todos los transistores

AGM01T08LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 85 -- -- V GS D DSS Zero Gate Voltage Drain Current V =80V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,

AGM01P15E Typical Electrical And Thermal Characteristics (Curves) Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.55 AGM01P15E SOT23-3 Marking Instructions www.agm-mos.com 6 VER2.55 AGM01P15E Disclaimer The information provided in this document is believed to be accurat

AGM01P15D Test Circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 3 VER2.71 AGM01P15D Dimensions TO-252 D1 c MILLIMETER SYMBOL MIN Typ. MAX A 2.200 2.300 2.400 A1 0.000 0.127 h b 0.640 0.690 0.740 c( 0.460 0.520 0.580 D 6.500 6.600 6.700 D1 5.334 REF D2 4.826 REF D2 D3 3.166 REF E 6.000 6.100 6.

AGM01P15AP Test Circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 3 VER2.71 AGM01P15AP PDFN3.3*3.3 Marking Instructions www.agm-mos.com 7 VER2.71 AGM01P15AP Disclaimer The information provided in this document is believed to be accurate and reliable. However,Shenzhen Core Control Source Electronics Technology Co., Ltd.

AGM015N10LL TOLL Marking Instructions www.agm-mos.com 7 VER2.71 AGM015N10LL Disclaimer The information provided in this document is believed to be accurate and reliable. However,Shenzhen Core Control Source Electronics Technology Co., Ltd. does not assume any responsibility for the following consequences.Do not consider the use of such information or use beyond its scope. The