AGM025N08H Todos los transistores

AGM025N08H General Description Product Summary The AGM025N08H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 2.3m 180A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to

AGM025N13LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 135 -- -- V GS D DSS Zero Gate Voltage Drain Current V =135V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =

AGM025N10C Characteristics Curves Figure 2. Maximum Power Dissipation vs Case Figure 1. Safe Operating Area Temperature Figure 3. Maximum Continuous Drain Current vs Figure 4. Typical Output Characteristics Case Temperature www.agm-mos.com 3 VER2.71 AGM025N10C Figure 5. Transient Thermal Impedance Figure 7. Source-Drain Diode Forward Figure 6. Typical Transfer Characteristi

AGM028N08A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 85 -- -- V GS D DSS Zero Gate Voltage Drain Current V =85V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage