AGM025N08H Datasheet. Specs and Replacement

Type Designator: AGM025N08H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 1549 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO263

  📄📄 Copy 

AGM025N08H substitution

- MOSFET ⓘ Cross-Reference Search

 

AGM025N08H datasheet

 ..1. Size:1048K  cn agmsemi
 agm025n08h.pdf pdf_icon

AGM025N08H

AGM025N08H General Description Product Summary The AGM025N08H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 2.3m 180A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to ... See More ⇒

 7.1. Size:1793K  cn agmsemi
 agm025n13ll.pdf pdf_icon

AGM025N08H

AGM025N13LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 135 -- -- V GS D DSS Zero Gate Voltage Drain Current V =135V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =... See More ⇒

 7.2. Size:1309K  cn agmsemi
 agm025n10c.pdf pdf_icon

AGM025N08H

AGM025N10C Characteristics Curves Figure 2. Maximum Power Dissipation vs Case Figure 1. Safe Operating Area Temperature Figure 3. Maximum Continuous Drain Current vs Figure 4. Typical Output Characteristics Case Temperature www.agm-mos.com 3 VER2.71 AGM025N10C Figure 5. Transient Thermal Impedance Figure 7. Source-Drain Diode Forward Figure 6. Typical Transfer Characteristi... See More ⇒

 9.1. Size:2074K  cn agmsemi
 agm028n08a.pdf pdf_icon

AGM025N08H

AGM028N08A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 85 -- -- V GS D DSS Zero Gate Voltage Drain Current V =85V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage ... See More ⇒

SHOW MORE

Detailed specifications: AGM30P55D, AGM30P55D1, AGM30P85D, AGM015N10LL, AGM01P15AP, AGM01P15D, AGM01P15E, AGM01T08LL, 20N60, AGM025N10C, AGM025N13LL, AGM028N08A, AGM035N10A, AGM035N10C, AGM035N10H, AGM038N10A, AGM03N85H

Keywords - AGM025N08H MOSFET specs

 AGM025N08H cross reference

 AGM025N08H equivalent finder

 AGM025N08H pdf lookup

 AGM025N08H substitution

 AGM025N08H replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.