AGM025N08H MOSFET Datasheet: N-Ch, 85V, 180A. Full specification with pinout and replacement list

AGM025N08H Specs and Replacement

   Type Designator: AGM025N08H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 1549 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO263

AGM025N08H substitution

- MOSFET ⓘ Cross-Reference Search

AGM025N08H datasheet

..1. Size:1048K cn agmsemi
agm025n08h.pdf pdf_icon

AGM025N08H General Description Product Summary The AGM025N08H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 2.3m 180A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to ... See More ⇒

7.1. Size:1793K cn agmsemi
agm025n13ll.pdf pdf_icon

AGM025N13LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 135 -- -- V GS D DSS Zero Gate Voltage Drain Current V =135V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =... See More ⇒

7.2. Size:1309K cn agmsemi
agm025n10c.pdf pdf_icon

AGM025N10C Characteristics Curves Figure 2. Maximum Power Dissipation vs Case Figure 1. Safe Operating Area Temperature Figure 3. Maximum Continuous Drain Current vs Figure 4. Typical Output Characteristics Case Temperature www.agm-mos.com 3 VER2.71 AGM025N10C Figure 5. Transient Thermal Impedance Figure 7. Source-Drain Diode Forward Figure 6. Typical Transfer Characteristi... See More ⇒

9.1. Size:2074K cn agmsemi
agm028n08a.pdf pdf_icon

AGM028N08A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 85 -- -- V GS D DSS Zero Gate Voltage Drain Current V =85V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage ... See More ⇒

Detailed specifications: AGM30P55D , AGM30P55D1 , AGM30P85D , AGM015N10LL , AGM01P15AP , AGM01P15D , AGM01P15E , AGM01T08LL , 20N60 , AGM025N10C , AGM025N13LL , AGM028N08A , AGM035N10A , AGM035N10C , AGM035N10H , AGM038N10A , AGM03N85H .