AGM035N10C Todos los transistores

AGM035N10C General Description Product Summary The AGM035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 3.5m 160A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to

AGM035N10H General Description Product Summary The AGM035N10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 3.5m 150A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to

AGM035N10A Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Typ. forward transconductance I =f(V ) g =f(I ) D GS fs D www.agm-mos.com 3 VER2.71 AGM035N10A Drain-source on-state resistance Typ. capacitances R =f(T ); I =56A; V =10V C =f(V ); V =0V; f =1MHz DS(on) j D GS DS GS

AGM03N85H General Description Product Summary The AGM03N85H combines advanced trench to MOSFET technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 85V 2.8m 140A protection applications. Features TO-263 Pin Configuration Advance high cell density Trench technology Low R to minim

AGM038N10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag