AGM035N10C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM035N10C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 160 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 1473 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm

Encapsulados: TO220

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AGM035N10C datasheet

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 agm035n10c.pdf pdf_icon

AGM035N10C

AGM035N10C General Description Product Summary The AGM035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 3.5m 160A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to

 5.1. Size:1294K  cn agmsemi
 agm035n10h.pdf pdf_icon

AGM035N10C

AGM035N10H General Description Product Summary The AGM035N10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 3.5m 150A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to

 5.2. Size:1917K  cn agmsemi
 agm035n10a.pdf pdf_icon

AGM035N10C

AGM035N10A Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Typ. forward transconductance I =f(V ) g =f(I ) D GS fs D www.agm-mos.com 3 VER2.71 AGM035N10A Drain-source on-state resistance Typ. capacitances R =f(T ); I =56A; V =10V C =f(V ); V =0V; f =1MHz DS(on) j D GS DS GS

 9.1. Size:1011K  cn agmsemi
 agm03n85h.pdf pdf_icon

AGM035N10C

AGM03N85H General Description Product Summary The AGM03N85H combines advanced trench to MOSFET technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 85V 2.8m 140A protection applications. Features TO-263 Pin Configuration Advance high cell density Trench technology Low R to minim

MOSTRAR MÁS

Otros transistores... AGM01P15D, AGM01P15E, AGM01T08LL, AGM025N08H, AGM025N10C, AGM025N13LL, AGM028N08A, AGM035N10A, IRFB4110, AGM035N10H, AGM038N10A, AGM03N85H, AGM042N10A, AGM1030MBP, AGM1030MNA, AGM1075D, AGM1075-G