AGM035N10C MOSFET Datasheet: N-Ch, 100V, 160A. Full specification with pinout and replacement list

AGM035N10C Specs and Replacement

   Type Designator: AGM035N10C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1473 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TO220

AGM035N10C substitution

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AGM035N10C datasheet

..1. Size:1590K cn agmsemi
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AGM035N10C General Description Product Summary The AGM035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 3.5m 160A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to ... See More ⇒

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agm035n10h.pdf pdf_icon

AGM035N10H General Description Product Summary The AGM035N10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 3.5m 150A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to... See More ⇒

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AGM035N10A Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Typ. forward transconductance I =f(V ) g =f(I ) D GS fs D www.agm-mos.com 3 VER2.71 AGM035N10A Drain-source on-state resistance Typ. capacitances R =f(T ); I =56A; V =10V C =f(V ); V =0V; f =1MHz DS(on) j D GS DS GS ... See More ⇒

9.1. Size:1011K cn agmsemi
agm03n85h.pdf pdf_icon

AGM03N85H General Description Product Summary The AGM03N85H combines advanced trench to MOSFET technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 85V 2.8m 140A protection applications. Features TO-263 Pin Configuration Advance high cell density Trench technology Low R to minim... See More ⇒