AGM1075D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM1075D 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 40 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Encapsulados: TO252
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AGM1075D datasheet
agm1075d.pdf
AGM1075D General Description Product Summary The AGM1075D combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 100V 55m 16A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimize cond
agm1075mbp.pdf
AGM1075MBP General Description The AGM1075MBP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 65m 12A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to
agm1075-g.pdf
AGM1075-G Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM1075-G SOT23-3 Marking Inst
agm1075mna.pdf
AGM1075MNA Typical Characteristics (TJ =25 Noted) www.agm-mos.com 3 VER2.71 AGM1075MNA Typical Characteristics (TJ =25 Noted) www.agm-mos.com 4 VER2.71 AGM1075MNA Dimensions PDFN5*6 D3 D MILLIMETER SYMBOL MIN Typ. MAX A 0.900 1.000 1.100 A1 0.254 REF. A2 0 0.05 D 4.824 4.900 4.976 D1 1.605 1.705 1.805 D2 0.500 0.600 0.700 D3 4.924 5.000 5.076 E 5.924 6.000
Otros transistores... AGM035N10A, AGM035N10C, AGM035N10H, AGM038N10A, AGM03N85H, AGM042N10A, AGM1030MBP, AGM1030MNA, IRF640N, AGM1075-G, AGM1075MBP, AGM1075MN, AGM1075MNA, AGM1075S, AGM1095MAP, AGM1095MN, AGM1099D
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SSW4668 | IXFH60N50P3 | QM2607C1 | APT6M100K | FQPF32N12V2 | FQPF3N80 | APT8018JN
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