AGM1075D - описание и поиск аналогов

AGM1075D General Description Product Summary The AGM1075D combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 100V 55m 16A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimize cond

AGM1075MBP General Description The AGM1075MBP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 65m 12A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to

AGM1075-G Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM1075-G SOT23-3 Marking Inst

AGM1075MNA Typical Characteristics (TJ =25 Noted) www.agm-mos.com 3 VER2.71 AGM1075MNA Typical Characteristics (TJ =25 Noted) www.agm-mos.com 4 VER2.71 AGM1075MNA Dimensions PDFN5*6 D3 D MILLIMETER SYMBOL MIN Typ. MAX A 0.900 1.000 1.100 A1 0.254 REF. A2 0 0.05 D 4.824 4.900 4.976 D1 1.605 1.705 1.805 D2 0.500 0.600 0.700 D3 4.924 5.000 5.076 E 5.924 6.000

AGM1075S General Description Product Summary The AGM1075S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 62m 10A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize

AGM1075MN Test Circuit 1 EAS test circuit 2 Gate charge test circuit 3 Switch Time Test Circuit www.agm-mos.com 3 VER2.55 AGM1075MN Typical Electrical and Thermal Characteristics (curves) Figure1. Source-Drain Diode Forward Voltage Figure2. Safe operating area Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance F