AGM1099D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM1099D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1.5 nS

Cossⓘ - Capacitancia de salida: 47 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm

Encapsulados: TO252

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AGM1099D datasheet

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AGM1099D

AGM1099D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =6A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.73 AGM1099D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j D BR

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AGM1099D

AGM1099E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage

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AGM1099D

AGM1099EY General Description Product Summary The AGM1099EY combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 92m 5.0A Features Advance high cell density Trench technology SOT89-3 Pin Configuration Low R to mi

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 agm1099el.pdf pdf_icon

AGM1099D

AGM1099EL General Description Product Summary The AGM1099EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 5.0A Features Advance high cell density Trench technology SOT-23 Pin Configuration Low R to mi

MOSTRAR MÁS

Otros transistores... AGM1075D, AGM1075-G, AGM1075MBP, AGM1075MN, AGM1075MNA, AGM1075S, AGM1095MAP, AGM1095MN, IRF9540, AGM1099E, AGM1099EY, AGM1099S, AGM10N15D, AGM042N10D, AGM056N08C, AGM056N10A, AGM056N10C