AGM1099E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM1099E  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT23

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AGM1099E datasheet

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 agm1099e.pdf pdf_icon

AGM1099E

AGM1099E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage

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 agm1099ey.pdf pdf_icon

AGM1099E

AGM1099EY General Description Product Summary The AGM1099EY combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 92m 5.0A Features Advance high cell density Trench technology SOT89-3 Pin Configuration Low R to mi

 0.2. Size:1137K  cn agmsemi
 agm1099el.pdf pdf_icon

AGM1099E

AGM1099EL General Description Product Summary The AGM1099EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 5.0A Features Advance high cell density Trench technology SOT-23 Pin Configuration Low R to mi

 7.1. Size:1510K  cn agmsemi
 agm1099s.pdf pdf_icon

AGM1099E

AGM1099S General Description Product Summary The AGM1099S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 7.0A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimi

MOSTRAR MÁS

Otros transistores... AGM1075-G, AGM1075MBP, AGM1075MN, AGM1075MNA, AGM1075S, AGM1095MAP, AGM1095MN, AGM1099D, 7N65, AGM1099EY, AGM1099S, AGM10N15D, AGM042N10D, AGM056N08C, AGM056N10A, AGM056N10C, AGM056N10H