AGM1099E Datasheet. Specs and Replacement
Type Designator: AGM1099E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT23
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AGM1099E substitution
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AGM1099E datasheet
agm1099e.pdf
AGM1099E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage ... See More ⇒
agm1099ey.pdf
AGM1099EY General Description Product Summary The AGM1099EY combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 92m 5.0A Features Advance high cell density Trench technology SOT89-3 Pin Configuration Low R to mi... See More ⇒
agm1099el.pdf
AGM1099EL General Description Product Summary The AGM1099EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 5.0A Features Advance high cell density Trench technology SOT-23 Pin Configuration Low R to mi... See More ⇒
agm1099s.pdf
AGM1099S General Description Product Summary The AGM1099S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 7.0A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimi... See More ⇒
Detailed specifications: AGM1075-G, AGM1075MBP, AGM1075MN, AGM1075MNA, AGM1075S, AGM1095MAP, AGM1095MN, AGM1099D, 7N65, AGM1099EY, AGM1099S, AGM10N15D, AGM042N10D, AGM056N08C, AGM056N10A, AGM056N10C, AGM056N10H
Keywords - AGM1099E MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
MOSFET Parameters. How They Affect Each Other
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