AGM056N08C Todos los transistores

 

AGM056N08C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM056N08C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 173.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 138 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 607 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO220
 

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AGM056N08C datasheet

 ..1. Size:786K  cn agmsemi
 agm056n08c.pdf pdf_icon

AGM056N08C

AGM056N08C General Description Product Summary The AGM056N08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 4.4m 120A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to

 7.1. Size:1787K  cn agmsemi
 agm056n10c.pdf pdf_icon

AGM056N08C

AGM056N10C General Description Product Summary The AGM056N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 5.4m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to

 7.2. Size:1590K  cn agmsemi
 agm056n10h.pdf pdf_icon

AGM056N08C

AGM056N10H General Description The AGM056N10H combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. Features 100V 5.1m 140A Advance high cell density Trench technology TO-263 Pin Configuration Low R to

 7.3. Size:1500K  cn agmsemi
 agm056n10a.pdf pdf_icon

AGM056N08C

AGM056N10A General Description The AGM056N10A combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery protection applications. BVDSS RDSON ID Features 100V 4.7m 100A Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to

MOSTRAR MÁS

Otros transistores... AGM1095MAP , AGM1095MN , AGM1099D , AGM1099E , AGM1099EY , AGM1099S , AGM10N15D , AGM042N10D , 2SK3878 , AGM056N10A , AGM056N10C , AGM056N10H , AGM065N10C , AGM065N10D , AGM085N10C , AGM085N10C1 , AGM085N10F .

 

 
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