AGM056N08C Datasheet. Specs and Replacement

Type Designator: AGM056N08C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 173.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 138 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 607 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO220

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AGM056N08C datasheet

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AGM056N08C

AGM056N08C General Description Product Summary The AGM056N08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 4.4m 120A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to ... See More ⇒

 7.1. Size:1787K  cn agmsemi
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AGM056N08C

AGM056N10C General Description Product Summary The AGM056N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 5.4m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to... See More ⇒

 7.2. Size:1590K  cn agmsemi
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AGM056N08C

AGM056N10H General Description The AGM056N10H combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. Features 100V 5.1m 140A Advance high cell density Trench technology TO-263 Pin Configuration Low R to ... See More ⇒

 7.3. Size:1500K  cn agmsemi
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AGM056N08C

AGM056N10A General Description The AGM056N10A combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery protection applications. BVDSS RDSON ID Features 100V 4.7m 100A Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to ... See More ⇒

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Detailed specifications: AGM1095MAP, AGM1095MN, AGM1099D, AGM1099E, AGM1099EY, AGM1099S, AGM10N15D, AGM042N10D, STP75NF75, AGM056N10A, AGM056N10C, AGM056N10H, AGM065N10C, AGM065N10D, AGM085N10C, AGM085N10C1, AGM085N10F

Keywords - AGM056N08C MOSFET specs

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