AGM085N10C1 Todos los transistores

 

AGM085N10C1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM085N10C1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 565 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: TO220
 

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AGM085N10C1 Datasheet (PDF)

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AGM085N10C1

AGM085N10C1Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.82AGM085N10C1Figure 7. Normalize

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AGM085N10C1

AGM085N10C General DescriptionProduct SummaryThe AGM085N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.100V 8.0m 80A FeaturesAdvance high cell density Trench technologyTO-220C Pin Configuration Low R to m

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AGM085N10C1

AGM085N10FTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

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AGM085N10C1

AGM08T15C General DescriptionProduct SummaryThe AGM08T15C combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and battery BVDSS RDSON IDfor loadprotection applications.150V 5.5m 150A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to mi

MOSTRAR MÁS

Otros transistores... AGM042N10D , AGM056N08C , AGM056N10A , AGM056N10C , AGM056N10H , AGM065N10C , AGM065N10D , AGM085N10C , 12N60 , AGM085N10F , AGM08T15C , AGM1010A2 , AGM1010A-E , AGM1010A-F , AGM1030MA , , .

History: AGM085N10F

 

 
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