AGM085N10C1 - Даташиты. Аналоги. Основные параметры

AGM085N10C1Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.82AGM085N10C1Figure 7. Normalize

AGM085N10C General DescriptionProduct SummaryThe AGM085N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.100V 8.0m 80A FeaturesAdvance high cell density Trench technologyTO-220C Pin Configuration Low R to m

AGM085N10FTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM08T15C General DescriptionProduct SummaryThe AGM08T15C combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and battery BVDSS RDSON IDfor loadprotection applications.150V 5.5m 150A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to mi