AGM15T06C-B Todos los transistores

 

AGM15T06C-B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM15T06C-B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 140 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 1560 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: TO220
 

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AGM15T06C-B datasheet

 ..1. Size:2043K  cn agmsemi
 agm15t06c-b.pdf pdf_icon

AGM15T06C-B

AGM15T06C-B Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 140 147 -- V GS D DSS Zero Gate Voltage Drain Current V =140V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volt

 5.1. Size:1496K  cn agmsemi
 agm15t06c.pdf pdf_icon

AGM15T06C-B

AGM15T06C General Description Product Summary The AGM15T06C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 150V 6.5m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi

 6.1. Size:1457K  cn agmsemi
 agm15t06h.pdf pdf_icon

AGM15T06C-B

AGM15T06H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

 6.2. Size:1401K  cn agmsemi
 agm15t06ll.pdf pdf_icon

AGM15T06C-B

AGM15T06LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage

MOSTRAR MÁS

Otros transistores... AGM12T05F , AGM12T08A , AGM12T12A , AGM12T12C , AGM12T12D , AGM13T05A , AGM15T05LL , AGM15T06C , IRF1407 , AGM15T06H , AGM15T06LL , AGM15T06T , AGM15T13A , AGM15T13C , AGM15T13D , AGM15T13F , AGM15T13H .

History: CMT04N60XN252

 

 
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