AGM15T13H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM15T13H Datasheet (PDF)

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AGM15T13HTable3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 150 -- VGS DDSS--Zero Gate Voltage Drain Current V =150V,V =0V -- 1 ADS GSI --DSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V =V

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AGM15T13ATypical Electrical and Thermal Characteristics150 150VGS = 10VVDS = 5.0V8.0VVGS = 6.0V7.0V120 120VGS = 5.5V9090TJ = 175CVGS = 5.0V6060VGS = 4.8VTJ = 25C3030VGS = 4.5V000 2 4 6 8 100 1 2 3 4 5VGS - Gate-to-Source Voltage (V)VDS - Drain-to-Source Voltage (V)Figure 2: Transfer CharacteristicsFigure 1: Output Characteristics 5

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AGM15T13DTable3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 150 -- VGS DDSS--Zero Gate Voltage Drain Current V =150V,V =0V -- 1 ADS GSI --DSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V =V

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AGM15T13FTable3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 150 -- VGS DDSS--Zero Gate Voltage Drain Current V =150V,V =0V -- 1 ADS GSI --DSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V =V