AGM15T16D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM15T16D 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 139 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 61 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.4 nS
Cossⓘ - Capacitancia de salida: 196 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
Encapsulados: TO252
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AGM15T16D datasheet
agm15t16d.pdf
AGM15T16D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 150 -- -- V Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage
agm15t16c.pdf
AGM15T16C Typical Electrical & Thermal Characteristics 100 30 VGS = 10V VDS = 5.0V VGS = 6.0V VGS = 8.0V 80 24 TJ = 125 C 60 18 VGS = 5.5V 40 12 TJ = 25 C VGS = 5.0V 20 6 VGS = 4.5V 0 0 0 1 2 3 4 5 2 3 4 5 6 7 VDS (V) VGS (V) Figure 1 Saturation Characteristics Figure 2 Transfer Characteristics 17 2.5 VGS = 10V ID = 20A 16 2 15 1.5 VGS = 10V 14 1 13 0.5 12 0 0
agm15t13a.pdf
AGM15T13A Typical Electrical and Thermal Characteristics 150 150 VGS = 10V VDS = 5.0V 8.0V VGS = 6.0V 7.0V 120 120 VGS = 5.5V 90 90 TJ = 175 C VGS = 5.0V 60 60 VGS = 4.8V TJ = 25 C 30 30 VGS = 4.5V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Figure 2 Transfer Characteristics Figure 1 Output Characteristics 5
agm15t13h.pdf
AGM15T13H Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V
Otros transistores... AGM15T06LL, AGM15T06T, AGM15T13A, AGM15T13C, AGM15T13D, AGM15T13F, AGM15T13H, AGM15T16C, K4145, AGM16N10C, AGM16N10D, AGM302C1, AGM302D1, AGM303A, AGM303AP, AGM303D, AGM303D1
Parámetros del MOSFET. Cómo se afectan entre sí.
History: AGM206A | IXFH74N20P | SSU65R420S2 | SST65R1K2S2E
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