AGM304AP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM304AP  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 398 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: PDFN3.3X3.3

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AGM304AP datasheet

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AGM304AP

AGM304AP General Description The AGM304AP combines advanced trench Product Summary MOSFETtechnology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 3.8m 40A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi

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AGM304AP

AGM304AP-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm

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AGM304AP

AGM304A General Description Product Summary The AGM304A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 2.8m 100A Features PDFN5*6 Pin Configuration Advance high cell density Trench technology Low R to minimi

 7.2. Size:1271K  cn agmsemi
 agm304a-b.pdf pdf_icon

AGM304AP

AGM304A-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm-

MOSTRAR MÁS

Otros transistores... AGM303A, AGM303AP, AGM303D, AGM303D1, AGM303MNA, AGM3045A, AGM304A, AGM304A-B, AO4468, AGM304AP-B, AGM304D, AGM304MNQ, AGM304S, AGM18N20D, AGM18N20H, AGM204A, AGM204AP