AGM304AP-B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM304AP-B Datasheet (PDF)

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AGM304AP-BTYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1On-Region Characteristics (Note E) Figure 4: On-Resistance vs. Junction Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics (Note E)Voltage (Note E) www.agm

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AGM304AP General DescriptionThe AGM304AP combines advanced trenchProduct SummaryMOSFETtechnology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 3.8m 40A FeaturesAdvance high cell density Trench technology PDFN3.3*3.3 Pin ConfigurationLow R to mi

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AGM304A General DescriptionProduct SummaryThe AGM304A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.30V 2.8m 100A FeaturesPDFN5*6 Pin ConfigurationAdvance high cell density Trench technologyLow R to minimi

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AGM304A-BTYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1On-Region Characteristics (Note E) Figure 4: On-Resistance vs. Junction Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics (Note E)Voltage (Note E) www.agm-

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