Аналоги AGM304AP-B. Основные параметры
Наименование производителя: AGM304AP-B
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 23 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 73.9 ns
Cossⓘ - Выходная емкость: 434 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: PDFN3.3X3.3
Аналог (замена) для AGM304AP-B
AGM304AP-B даташит
agm304ap-b.pdf
AGM304AP-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm
agm304ap.pdf
AGM304AP General Description The AGM304AP combines advanced trench Product Summary MOSFETtechnology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 3.8m 40A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi
agm304a.pdf
AGM304A General Description Product Summary The AGM304A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 2.8m 100A Features PDFN5*6 Pin Configuration Advance high cell density Trench technology Low R to minimi
agm304a-b.pdf
AGM304A-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm-
Другие MOSFET... AGM303AP , AGM303D , AGM303D1 , AGM303MNA , AGM3045A , AGM304A , AGM304A-B , AGM304AP , IRF830 , AGM304D , AGM304MNQ , AGM304S , AGM18N20D , AGM18N20H , AGM204A , AGM204AP , AGM205D .
History: IRLML2803PBF | FDC5661N-F085 | STL23N85K5 | BL50N30-W | AGM13T05A | AGM1405F
History: IRLML2803PBF | FDC5661N-F085 | STL23N85K5 | BL50N30-W | AGM13T05A | AGM1405F
Список транзисторов
Обновления
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