AGM304S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM304S General DescriptionThe AGM304S combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 5.2m 17A FeaturesAdvance high cell density Trench technologySOP-8 Pin ConfigurationLow R to minimize

AGM304MNQ Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.81.81.41.41.010.60.60.2 0.2-50 0 50 100 150 -50 0 50 100 150TJ ,Junction Temperature ( ) TJ , Junction Temperature ()Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th)

AGM304AP General DescriptionThe AGM304AP combines advanced trenchProduct SummaryMOSFETtechnology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 3.8m 40A FeaturesAdvance high cell density Trench technology PDFN3.3*3.3 Pin ConfigurationLow R to mi

AGM3045A General DescriptionProduct SummaryThe AGM3045A combines advanced trench MOSFETtotechnology with a low resistance package provideextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal load switch and battery protectionforapplications.30V 4.6m 80A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R to mini

AGM304A General DescriptionProduct SummaryThe AGM304A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.30V 2.8m 100A FeaturesPDFN5*6 Pin ConfigurationAdvance high cell density Trench technologyLow R to minimi

AGM304AP-BTYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1On-Region Characteristics (Note E) Figure 4: On-Resistance vs. Junction Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics (Note E)Voltage (Note E) www.agm

AGM304D Typical Characteristics TJ = 25C, unless otherwise noted 120 12010V 8V 1001006V VDS = 15V 4.5V 4V 80803.5V 60604040C 20 TJ = 12520TJ = 25C 000 1 2 3 4 50 1 2 3 4 5 6VDS (Volts) VGS (Volts) Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics 10000109TJ = 25C 8Ciss 10007VGS = 4.5V Co

AGM304A-BTYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1On-Region Characteristics (Note E) Figure 4: On-Resistance vs. Junction Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics (Note E)Voltage (Note E) www.agm-