AGM304S datasheet, подбор замены

 ..1. Size:1008K  cn agmsemi
 agm304s.pdf 

AGM304S General Description The AGM304S combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 5.2m 17A Features Advance high cell density Trench technology SOP-8 Pin Configuration Low R to minimize

 8.1. Size:1126K  cn agmsemi
 agm304mnq.pdf 

AGM304MNQ Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 1.8 1.4 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature ( ) TJ , Junction Temperature ( ) Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th)

 8.2. Size:991K  cn agmsemi
 agm304ap.pdf 

AGM304AP General Description The AGM304AP combines advanced trench Product Summary MOSFETtechnology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 3.8m 40A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi

 8.3. Size:1348K  cn agmsemi
 agm3045a.pdf 

AGM3045A General Description Product Summary The AGM3045A combines advanced trench MOSFET to technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal load switch and battery protection for applications. 30V 4.6m 80A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to mini

 8.4. Size:1312K  cn agmsemi
 agm304a.pdf 

AGM304A General Description Product Summary The AGM304A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 2.8m 100A Features PDFN5*6 Pin Configuration Advance high cell density Trench technology Low R to minimi

 8.5. Size:972K  cn agmsemi
 agm304ap-b.pdf 

AGM304AP-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm

 8.6. Size:1207K  cn agmsemi
 agm304d.pdf 

AGM304D Typical Characteristics TJ = 25 C, unless otherwise noted 120 120 10V 8V 100 100 6V VDS = 15V 4.5V 4V 80 80 3.5V 60 60 40 40 C 20 TJ = 125 20 TJ = 25 C 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS (Volts) VGS (Volts) Figure 1 On-Region Characteristics Figure 2 Transfer Characteristics 10000 10 9 TJ = 25 C 8 Ciss 1000 7 VGS = 4.5V Co

 8.7. Size:1271K  cn agmsemi
 agm304a-b.pdf 

AGM304A-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm-