DMN4015LK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN4015LK3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20.8 A

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 2072 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO252 DPAK

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DMN4015LK3 Datasheet (PDF)

..1. Size:664K diodes
dmn4015lk3.pdf

A Product Line ofDiodes IncorporatedDMN4015LK340V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 15m @ VGS= 10V 20.8A 40V 20m @ VGS= 4.5V 18.0A Mech

8.1. Size:287K diodes
dmn4010lk3.pdf

DMN4010LK3Green40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-Resistance V(BR)DSS RDS(ON) max TC = +25C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11.5m @ VGS = 10V 39A 40V Halogen and Antimony Free. Green Device (Note 3) 14.5m @ VGS = 4.5V 35A Qualified to AEC-Q101 Standards for Hi

8.2. Size:220K diodes
dmn4010lfg.pdf

DMN4010LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small, form factor, thermally efficient package enables higher density end products 12m @ VGS = 10V 11.5A 40V Occupies just 33% of the board area occupied by SO-8 enabling

8.3. Size:266K inchange semiconductor
dmn4010lk3.pdf

isc N-Channel MOSFET Transistor DMN4010LK3FEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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