AGM206A Todos los transistores

AGM206A Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65 AGM206A Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65 AGM206A PDFN5*6 Marking Instructions Model1 Model2 www.agm-mos.com 7 VER2.65

AGM206AP TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current TJ-Junction Temperature( ) TJ-Junction Temperature( ) Figure 5. VGS(th) vs Junction Temperature Figure 6. RDS(ON) vs

AGM206MAP General Description The AGM206MAP combines advanced trench MOSFET technology with a low resistance package Product Summary to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features 25A 20V 6m Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)

AGM206MDP General Description Product Summary The AGM206MDP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 4.5m 60A Features Advance high cell density Trench technology DFN3*3 Pin Configuration Low R to minim

AGM206D General Description Product Summary The AGM206D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 4.5m 85A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize c