AGM20P16AS Todos los transistores

AGM20P16AS Typical Electrical and Thermal Characteristics ton toff tr tf td(on) td(off) 90% 90% VOUT INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 1 Switching Test Circuit Figure 2 Switching Waveforms T T J-Junction Temperature( ) J-Junction Temperature( ) Figure 3 Power Dissipation Figure 4 Drain Current Vds Drain-Source Voltage (V) I Drain Current (A) D-

AGM20P22AS Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-4.5V D GS DS(on) j D GS www.agm-mos.com 3 VER2.5 AGM20P22AS Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA

AGM20P07EL Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics -I (A) -ID (A) D 25 25 4.5V T =-55 3V A 20 20 25 15 15 125 2V 2.5V 10 10 5 5 1.5V -V (V) ( ) GS -V (V) DS 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 Figure 3 On-resistance vs. Drain Current Figure 4 Body Diode Characteristics RDS(

AGM20P30AP1 Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -20 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-20V,V =0V -- -- -1.0 A DS GS I DSS V = 10V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage

AGM20P30AP Typical Characteristics P-Ch 20V Fast Switching MOSFETs 20 ID=-14A 16 12 8 4 0 1 3 4 5 -VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 12 9 TJ=150 TJ=25 6 3 0 0 0.3 0.6 0.9 1.2 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 1.8 1 . 8 1.4 1 . 4 1 1 . 0