AGM20P16AS Datasheet. Specs and Replacement
Type Designator: AGM20P16AS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 680 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: DFN2X2
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AGM20P16AS substitution
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AGM20P16AS datasheet
agm20p16as.pdf
AGM20P16AS Typical Electrical and Thermal Characteristics ton toff tr tf td(on) td(off) 90% 90% VOUT INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 1 Switching Test Circuit Figure 2 Switching Waveforms T T J-Junction Temperature( ) J-Junction Temperature( ) Figure 3 Power Dissipation Figure 4 Drain Current Vds Drain-Source Voltage (V) I Drain Current (A) D-... See More ⇒
agm20p22as.pdf
AGM20P22AS Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-4.5V D GS DS(on) j D GS www.agm-mos.com 3 VER2.5 AGM20P22AS Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA ... See More ⇒
agm20p07el.pdf
AGM20P07EL Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics -I (A) -ID (A) D 25 25 4.5V T =-55 3V A 20 20 25 15 15 125 2V 2.5V 10 10 5 5 1.5V -V (V) ( ) GS -V (V) DS 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 Figure 3 On-resistance vs. Drain Current Figure 4 Body Diode Characteristics RDS(... See More ⇒
agm20p30ap1.pdf
AGM20P30AP1 Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -20 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-20V,V =0V -- -- -1.0 A DS GS I DSS V = 10V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage ... See More ⇒
Detailed specifications: AGM206A, AGM206AP, AGM206D, AGM206MAP, AGM206MDP, AGM208D, AGM20N65F, AGM20P07EL, IRF840, AGM20P22AS, AGM13T15A, AGM13T15C, AGM13T15D, AGM13T30A, AGM13T30D, AGM1405C1, AGM1405F
Keywords - AGM20P16AS MOSFET specs
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History: SI7423DN | NCEP092N10AS | DHS020N88U | HM730 | 2N7297 | STF8204 | MTP4N50
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