AGM13T30A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM13T30A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 135 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 251 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm

Encapsulados: PDFN5X6

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AGM13T30A datasheet

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AGM13T30A

AGM13T30A Test Circuit 1) E test Circuit AS 2) Gate charge test Circuit 3) Switch Time Test Circuit www.agm-mos.com 3 VER2.55 AGM13T30A Typical Electrical and Thermal Characteristics Vds Drain-Source Voltage (V) T J-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Chara

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AGM13T30A

AGM13T30D General Description Product Summary The AGM13T30D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 32.5m 30A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to m

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AGM13T30A

AGM13T15A General Description Product Summary The AGM13T15A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 16m 58A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to mi

 8.2. Size:1230K  cn agmsemi
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AGM13T30A

AGM13T15D General Description Product Summary The AGM13T15D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 15.5m 58A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to m

MOSTRAR MÁS

Otros transistores... AGM208D, AGM20N65F, AGM20P07EL, AGM20P16AS, AGM20P22AS, AGM13T15A, AGM13T15C, AGM13T15D, IRF540N, AGM13T30D, AGM1405C1, AGM1405F, AGM14N10A, AGM14N10AP, AGM14N10D, AGM150P10AP, AGM150P10D