AGM13T30A Datasheet. Specs and Replacement

Type Designator: AGM13T30A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 135 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 251 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: PDFN5X6

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AGM13T30A datasheet

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AGM13T30A

AGM13T30A Test Circuit 1) E test Circuit AS 2) Gate charge test Circuit 3) Switch Time Test Circuit www.agm-mos.com 3 VER2.55 AGM13T30A Typical Electrical and Thermal Characteristics Vds Drain-Source Voltage (V) T J-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Chara... See More ⇒

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AGM13T30A

AGM13T30D General Description Product Summary The AGM13T30D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 32.5m 30A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to m... See More ⇒

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AGM13T30A

AGM13T15A General Description Product Summary The AGM13T15A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 16m 58A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to mi... See More ⇒

 8.2. Size:1230K  cn agmsemi
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AGM13T30A

AGM13T15D General Description Product Summary The AGM13T15D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 15.5m 58A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to m... See More ⇒

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Detailed specifications: AGM208D, AGM20N65F, AGM20P07EL, AGM20P16AS, AGM20P22AS, AGM13T15A, AGM13T15C, AGM13T15D, IRF540N, AGM13T30D, AGM1405C1, AGM1405F, AGM14N10A, AGM14N10AP, AGM14N10D, AGM150P10AP, AGM150P10D

Keywords - AGM13T30A MOSFET specs

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