AGM14N10A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM14N10A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 54.5 nS

Cossⓘ - Capacitancia de salida: 470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: PDFN5X6

  📄📄 Copiar 

 Búsqueda de reemplazo de AGM14N10A MOSFET

- Selecciónⓘ de transistores por parámetros

 

AGM14N10A datasheet

 ..1. Size:1291K  cn agmsemi
agm14n10a.pdf pdf_icon

AGM14N10A

AGM14N10A Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10A Dimensions PDFN5*

 0.1. Size:1125K  cn agmsemi
agm14n10ap.pdf pdf_icon

AGM14N10A

AGM14N10AP Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10AP PDFN3.3*3.3 Markin

 6.1. Size:1104K  cn agmsemi
agm14n10d.pdf pdf_icon

AGM14N10A

AGM14N10D General Description The AGM14N10D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 100V 12m 50A Advance high cell density Trench technology TO-252 Pin Configuration Low R to mini

 9.1. Size:1320K  cn agmsemi
agm1405f.pdf pdf_icon

AGM14N10A

AGM1405F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V =V

Otros transistores... AGM20P22AS, AGM13T15A, AGM13T15C, AGM13T15D, AGM13T30A, AGM13T30D, AGM1405C1, AGM1405F, IRF640, AGM14N10AP, AGM14N10D, AGM150P10AP, AGM150P10D, AGM150P10S, AGM15N10AP, AGM15N10D, AGM305A