AGM14N10A Datasheet. Specs and Replacement

Type Designator: AGM14N10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54.5 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: PDFN5X6

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AGM14N10A substitution

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AGM14N10A datasheet

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AGM14N10A

AGM14N10A Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10A Dimensions PDFN5*... See More ⇒

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AGM14N10A

AGM14N10AP Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10AP PDFN3.3*3.3 Markin... See More ⇒

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AGM14N10A

AGM14N10D General Description The AGM14N10D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 100V 12m 50A Advance high cell density Trench technology TO-252 Pin Configuration Low R to mini... See More ⇒

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AGM14N10A

AGM1405F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V =V... See More ⇒

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Detailed specifications: AGM20P22AS, AGM13T15A, AGM13T15C, AGM13T15D, AGM13T30A, AGM13T30D, AGM1405C1, AGM1405F, IRF640, AGM14N10AP, AGM14N10D, AGM150P10AP, AGM150P10D, AGM150P10S, AGM15N10AP, AGM15N10D, AGM305A

Keywords - AGM14N10A MOSFET specs

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