AGM14N10A MOSFET Datasheet: N-Ch, 100V, 50A. Full specification with pinout and replacement list

AGM14N10A Specs and Replacement

   Type Designator: AGM14N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 54.5 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: PDFN5X6

AGM14N10A substitution

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AGM14N10A datasheet

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agm14n10a.pdf pdf_icon

AGM14N10A Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10A Dimensions PDFN5*... See More ⇒

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agm14n10ap.pdf pdf_icon

AGM14N10AP Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10AP PDFN3.3*3.3 Markin... See More ⇒

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agm14n10d.pdf pdf_icon

AGM14N10D General Description The AGM14N10D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 100V 12m 50A Advance high cell density Trench technology TO-252 Pin Configuration Low R to mini... See More ⇒

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agm1405f.pdf pdf_icon

AGM1405F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V =V... See More ⇒