AGM15P30E Todos los transistores

 

AGM15P30E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM15P30E

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 15 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 4.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 304 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT23

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AGM15P30E datasheet

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 agm15p30e.pdf pdf_icon

AGM15P30E

AGM15P30E General Description Product Summary The AGM15P30E combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -15V 34m -4.1A Features Advance high cell density Trench technology SOT-23-3 Pin Configuration Low R to minimize

 6.1. Size:1601K  cn agmsemi
 agm15p30as.pdf pdf_icon

AGM15P30E

AGM15P30AS Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -15 -18 -- V GS D Zero Gate Voltage Drain Current V =-15V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 10V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltag

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 agm15p13e.pdf pdf_icon

AGM15P30E

AGM15P13E Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; D GS DS(on) j D V =10V GS www.agm-mos.com 3 VER2.6 AGM15P13E Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA

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 agm15p22as.pdf pdf_icon

AGM15P30E

AGM15P22AS Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -16 -- -- V GS D Zero Gate Voltage Drain Current V =-16V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 10V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

MOSTRAR MÁS

Otros transistores... AGM325ME, AGM3400E, AGM15N10D-G, AGM15P13AS, AGM15P13E, AGM15P16AS, AGM15P22AS, AGM15P30AS, TK10A60D, AGM15T03LL, AGM16N65F, AGM1810S, AGM18N10A, AGM18N10AP, AGM18N10I, AGM18N10MNA, AGM18N10S

 

 

 

 

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